Wafer scale BN on sapphire substrates for improved graphene transport

Graphene nanoribbon field - e � ect transistors on wafer - scale epitaxial graphene on SiC substrates a

Wan Sik Hwang,1,2,b Pei Zhao,1 Kristof Tahy,1 Luke O. Nyakiti,3,4 Virginia D. Wheeler,3 Rachael L. Myers-Ward,3 Charles R. Eddy, Jr.,3 D. Kurt Gaskill,3 Joshua A. Robinson,5 Wilfried Haensch,6 Huili (Grace) Xing,1 Alan Seabaugh,1 and Debdeep Jena1,b 1 Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA 2Department of Materials Engineering, Korea Aerosp...

Graphene Nanoribbon Field-Effect Transistors on Wafer-Scale Epitaxial Graphene on SiC substrates

We report the realization of top-gated graphene nanoribbon field effect transistors (GNRFETs) of ~10 nm width on large-area epitaxial graphene exhibiting the opening of a band gap of ~0.14 eV. Contrary to prior observations of disordered transport and severe edge-roughness effects of GNRs, the experimental results presented here clearly show that the transport mechanism in carefully fabricated ...

Unveiling the carrier transport mechanism in epitaxial graphene for forming wafer-scale, single-domain graphene.

Graphene epitaxy on the Si face of a SiC wafer offers monolayer graphene with unique crystal orientation at the wafer-scale. However, due to carrier scattering near vicinal steps and excess bilayer stripes, the size of electrically uniform domains is limited to the width of the terraces extending up to a few microns. Nevertheless, the origin of carrier scattering at the SiC vicinal steps has no...

Wafer bonding of gallium arsenide on sapphire

Three-inch (100) gallium arsenide wafers were bonded to (1102) sapphire in a micro-cleanroom at room temperature under hydrophilic or hydrophobic surface conditions. Subsequent heating up to 500 ◦C increased the bond energy of the GaAs-on-sapphire (GOS) wafer pair close to the fracture energy of the bulk material. The bond energy was measured as a function of the temperature. Since the thermal ...

Wafer-scale homogeneity of transport properties in epitaxial graphene on SiC